The electron beam lithography (EBL) system (eLINE Plus，Raith) supports both ultra-high-resolution electron beam lithography and large-area nanofabrication. Large-area nanofabrication can be several millimeters to centimeters long, while maintaining minimum line edge roughness with stitch-free exposure technologies. It provides a  processing platform for micro-nano fabrication, nanoengineering, nano-optics, and so on.

Main characteristics:

Maximum acceleration voltage: 30 kV

The size of the write field: 25 μm – 1000 μm

Minimum electron beam size 1.6 nm

Minimum feature size : 8 nm

Splicing accuracy: X/Y axis stitching error: < 40 nm

Engraving accuracy: X/Y axis engraving error: < 40 nm