Inductively coupled plasma etching (ICP, PlasmaPro100 Cobra300, Oxford Instruments) is a deep reactive ion etching technique. The system has two independent radio frequency power supplies, which have the characteristics of high ion density, fast etching rate, good directionality, and high etching selectivity. ICP can be used to etch deep grooves.
Features:
Etchable material: Si, SiO2, Si3N4
Process gas: SF6, CH4, CHF3, C4F8, O2, Ar
Maximum etching area: 6”
Etch rate: > 1 μm/min
Selectivity for Si etching: > 20 (photoresist); >50 (SiO2)
Uniformity (in-wafer): < 3%
Reproducibility (run to run): < 3%
