Reactive ion beam etching (RIE, RIE-150A, Tailong Electronics) is a dry etching method that combines the physical effects of ion bombardment generated by the glow discharge of a gas under a high-frequency electric field and the chemical reaction of active particles. It has good directivity, good uniformity over a large area, and can Etch fine pattern structure.
Features:
Etchable material: Si, SiO2, Si3N4
Process gas: SF6, CH4, CHF3, O2, Ar
Maximum etch area: 6”
Selectivity for Si etching: > 2 (photoresist); >5 (SiO2)
Uniformity (in-wafer): < 5%
